NCE6050KA

description the nce6050ka uses advanced trench technology and design to provide excellent rds(on) with low gate charge. it can be used in a wide variety of applications. general features vds =60v,id =50a rds(on) <20mΩ @ vgs=10v high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high eas excellent package for good heat dissipation special process technology for high esd capability application power switching application hard switched and high frequency circuits uninterruptible power supply
parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bvdss vgs=0v id=250μa 60 - - v zero gate voltage drain current idss vds=60v,vgs=0v - - 1 μa gate-body leakage current igss vgs=±20v,vds=0v - - ±100 na on characteristics (note 3) gate threshold voltage vgs(th) vds=vgs,id=250μa 1.4 1.9 2.5 v drain-source on-state resistance rds(on) vgs=10v, id=20a - 14 20 mΩ forward transconductance gfs vds=5v,id=20a 18 - - s dynamic characteristics (note4) input capacitance clss - 2050 - pf output capacitance coss - 158 - pf reverse transfer capacitance crss vds=30v,vgs=0v, f=1.0mhz - 120 - pf switching characteristics (note 4) turn-on delay time td(on) - 7.4 - ns turn-on rise time tr - 5.1 - ns turn-off delay time td(off) - 28.2 - ns turn-off fall time tf vdd=30v, rl=6.7Ω vgs=10v,rg=3Ω - 5.5 - ns total gate charge qg - 50 nc gate-source charge qgs - 6 nc gate-drain charge qgd vds=30v,id=20a, vgs=10v - 15 nc drain-source diode characteristics diode forward voltage (note 3) vsd vgs=0v,is=20a - 1.2 v diode forward current (note 2) is - - 50 a reverse recovery time trr - 28 - ns reverse recovery charge qrr tj = 25°c, if =20a di/dt = 100a/μs(note3) - 40 - nc forward turn-on time ton intrinsic turn-on time is negligible (turn-on is dominated by ls+ld)
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